Bubbler apparatus and delivery method

ABSTRACT

This invention relates to vapor phase reagent dispensing apparatus having a bubbler tube and also a metal seal aligned and in contact with the hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application Ser.No. 60/898,121, filed on Jan. 29, 2007; U.S. Provisional ApplicationSer. No. 60/903,720, filed on Feb. 27, 2007; U.S. ProvisionalApplication Ser. No. 60/897,947, filed on Jan. 29, 2007; and U.S.Provisional Application Ser. No. 60/903,579, filed on Feb. 27, 2007; allof which are incorporated herein by reference. This application isrelated to U.S. patent application Ser. No. 11/013,434, filed Dec. 17,2004; U.S. patent application Ser. No. 12/014,248, filed on Jan. 15,2008; U.S. patent application Ser. No. 12/014,282, filed Jan. 15, 2008and issued Jun. 14, 2011 as U.S. Pat. No. 7,959,994; U.S. patentapplication Ser. No. 12/014,194, filed Jan. 15, 2008; U.S. patentapplication Ser. No. 12/014,228, filed Jan. 15, 2008; and U.S. patentapplication Ser. No. 12/014,237, filed Jan. 15, 2008; all of which areincorporated herein by reference.

FIELD OF THE INVENTION

This invention relates to a vapor phase reagent dispensing apparatusthat may be used for dispensing vapor phase reagents such as precursorsfor deposition of materials in the manufacture of semiconductormaterials and devices.

BACKGROUND OF THE INVENTION

High purity chemicals used in the semiconductor and pharmaceuticalindustries require special packaging to maintain their purity instorage. This is especially true for chemicals that react with airand/or moisture in the air. Such high purity chemicals are typicallysupplied in containers such as bubblers or ampoules.

Modern chemical vapor deposition and atomic layer deposition toolsutilize bubblers or ampoules to deliver precursor chemicals to adeposition chamber. These bubblers or ampoules work by passing a carriergas through a container of high purity liquid precursor chemical andcarrying the precursor vapor along with the gas to the depositionchamber.

The containers are typically manufactured as either one-part (i.e., thetop cover or lid is not removable from the base) or two-part (i.e., thetop cover or lid is removable from the base and can be attached to thebase by bolts) containers. The one-part containers have a high degree ofintegrity, but are more difficult to clean than the two-part containers.Because the top cover or lid can be removed from the base, the two-partcontainers are easier to clean but are more difficult to seal and reuse.Easier cleaning allows for the reuse of a two-part container beyond whatmay be achieved with a one-part container. Reuse of containers isimportant for minimizing costs and also for environmental concerns.

As integrated circuits have decreased in size, so have the dimensions ofthe internal components or features. As the sizes decreased, the needfor more pure chemicals has correspondingly increased to minimize theeffect of impurities. Suppliers therefore, must be able to not onlymanufacture high purity chemicals, but must also be able to deliver themin a container which will maintain the high purity.

The standard materials of construction for these containers shifted fromthe delicate quartz containers to stainless steel in the late 1990's.See, for example, U.S. Pat. No. 5,607,002. These containers are known inthe industry either as bubblers or ampoules and are now routinelyconstructed of stainless steel, e.g., 316SS. See, for example, U.S. Pat.Nos. 3,930,591, 6,029,717 and 7,077,388.

Further, in most cases, it is necessary to heat the ampoule by somemeans in order to increase the vapor pressure of the precursor and thusincrease the amount of chemical in the carrier gas. It is important tomonitor the temperature of the liquid precursor chemical inside of theampoule to control the vapor pressure.

It is also important to know when the liquid precursor chemical insideof the ampoule is close to running out so that it can be changed at theend of a chemical vapor deposition or atomic layer deposition cycle. Ifthe ampoule should run dry in the middle of a cycle, the entire batch ofwafers will be ruined resulting in a potential loss of millions ofdollars. It is therefore desirable to leave as little liquid precursorchemical as possible inside of the ampoule to avoid wasting the valuableliquid precursor chemical. As the cost of chemical precursors increase,wasting as little chemical as possible becomes more important.

For two-part high-purity chemical containers to gain commercialacceptance, it will be necessary to develop a more reliable seal. U.S.Pat. No. 6,905,125 relates to a metal gasket such as C-ring gasket toprevent leakage of fluid from semiconductor manufacturing apparatus.High purity chemicals for the electronics industry require leak-tightcontainers that are able to withstand high vacuum.

It would be desirable in the art to provide an easy to clean, two-partvapor or liquid phase reagent dispensing apparatus which is capable ofmaintaining high purity of the precursor chemical and also increasingthe usage of the precursor chemical in the apparatus, andcorrespondingly reducing waste thereof.

SUMMARY OF THE INVENTION

This invention relates in part to a vapor phase reagent dispensingapparatus comprising:

a vessel which comprises a removable top wall member, a sidewall memberand a bottom wall member configured to form an internal vesselcompartment to hold a source chemical up to a fill level and toadditionally define an inner gas volume above the fill level;

said sidewall member having a protuberance that extends into theinternal vessel compartment adjacent to the top wall member;

said top wall member and said sidewall member having opposing flatsurfaces, wherein the opposing flat surfaces are optionally in contactwith one another;

fastening means for securing said top wall member to said sidewallmember through the opposing flat surfaces that are optionally in contactwith one another;

said top wall member and said protuberance having opposing flatsurfaces, wherein the opposing flat surfaces are not in contact with oneanother and at least a portion of the opposing flat surfaces arehardened;

a metal seal aligned and in contact with the hardened opposing flatsurfaces of said top wall member and said protuberance;

a portion of the top wall member having a carrier gas feed inlet openingcomprising a bubbler tube that extends through the inner gas volume intothe source chemical and through which said carrier gas can be bubbledinto the source chemical to cause at least a portion of source chemicalvapor to become entrained in said carrier gas to produce a flow of vaporphase reagent to said inner gas volume above the fill level, saidbubbler tube having an inlet end adjacent to the top wall member and anoutlet end adjacent to the bottom wall member; and

a portion of the top wall member having a vapor phase reagent outletopening through which said vapor phase reagent can be dispensed fromsaid apparatus;

wherein said hardened opposing flat surfaces of said top wall member andsaid protuberance have a hardness greater than the hardness of saidmetal seal.

This invention also relates to a method for delivery of a vapor phasereagent to a deposition chamber comprising:

(a) providing a vapor phase reagent dispensing apparatus comprising:

a vessel which comprises a removable top wall member, a sidewall memberand a bottom wall member configured to form an internal vesselcompartment to hold a source chemical up to a fill level and toadditionally define an inner gas volume above the fill level;

said sidewall member having a protuberance that extends into theinternal vessel compartment adjacent to the top wall member;

said top wall member and said sidewall member having opposing flatsurfaces, wherein the opposing flat surfaces are optionally in contactwith one another;

fastening means for securing said top wall member to said sidewallmember through the opposing flat surfaces that are optionally in contactwith one another;

said top wall member and said protuberance having opposing flatsurfaces, wherein the opposing flat surfaces are not in contact with oneanother and at least a portion of the opposing flat surfaces arehardened; and

a metal seal aligned and in contact with the hardened opposing flatsurfaces of said top wall member and said protuberance;

wherein said hardened opposing flat surfaces of said top wall member andsaid protuberance have a hardness greater than the hardness of saidmetal seal;

a portion of the top wall member having a carrier gas feed inlet openingcomprising a bubbler tube that extends through the inner gas volume intothe source chemical and through which said carrier gas can be bubbledinto the source chemical to cause at least a portion of source chemicalvapor to become entrained in said carrier gas to produce a flow of vaporphase reagent to said inner gas volume above the fill level, saidbubbler tube having an inlet end adjacent to the top wall member and anoutlet end adjacent to the bottom wall member;

a carrier gas feed line extending from the carrier gas feed inletopening upwardly and exteriorly from the top wall member for delivery ofcarrier gas into said source chemical, the carrier gas feed linecontaining a carrier gas flow control valve therein for control of flowof the carrier gas therethrough;

a portion of the top wall member having a vapor phase reagent outletopening through which said vapor phase reagent can be dispensed fromsaid apparatus; and

a vapor phase reagent discharge line extending from the vapor phasereagent outlet opening upwardly and exteriorly from the top wall memberfor removal of vapor phase reagent from said inner gas volume above thefill level, the vapor phase reagent discharge line containing a vaporphase reagent flow control valve therein for control of flow of thevapor phase reagent therethrough;

adding source chemical at ambient temperature to said vapor phasereagent dispensing apparatus;

heating the source chemical in said vapor phase reagent dispensingapparatus to a temperature sufficient to vaporize the source chemical toprovide vapor phase reagent;

feeding a carrier gas into said vapor phase reagent dispensing apparatusthrough said carrier gas feed line and said bubbler tube;

withdrawing the vapor phase reagent and carrier gas from said vaporphase reagent dispensing apparatus through said vapor phase reagentdischarge line; and

feeding the vapor phase reagent and carrier gas into said depositionchamber.

The vapor phase reagent dispensing apparatus or assembly of theinvention may be employed in a wide variety of process systems,including for example chemical vapor deposition systems wherein thevapor phase reagent from the supply vessel is passed to a chemical vapordeposition chamber for deposition of a material layer on a substratetherein from the source vapor.

The vapor phase reagent dispensing apparatus or assembly of theinvention is easy to clean because of the removable top wall member,maintains purity of the liquid precursor chemical, increases usage rateof the liquid or solid precursor chemical and thereby reduces waste.

Other aspects, features and embodiments of the invention will be morefully apparent from the ensuing disclosure and appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic representation of a vapor phase reagent dispensingapparatus shown in partial cross-section.

FIG. 2 is a schematic representation of a vapor phase reagent dispensingapparatus shown in partial cross-section.

FIG. 3 is a schematic representation of a liquid phase reagentdispensing apparatus shown in partial cross-section.

FIG. 4 is a representation of two metal seals shown in cross-section.

FIG. 5 is a schematic representation of a portion of a vapor or liquidphase reagent dispensing apparatus shown in cross-section.

FIG. 6 is a representation of a metal seal shown in cross-section.

FIG. 7 is a photograph of a protuberance surface of an ampoule that hasbeen damaged from a single delta metal seal. The protuberance surfacewas not hardened.

FIG. 8 is a photograph of a protuberance surface of an ampoule that hasbeen damaged from two delta metal seals. The protuberance surface wasnot hardened.

FIG. 9 is a schematic representation of a chemical vapor depositionsystem including a vapor phase reagent dispensing apparatus shown inelevation view and partial cross-section.

FIG. 10 is a schematic representation of a chemical vapor depositionsystem including a vapor phase reagent dispensing apparatus shown inelevation view and partial cross-section.

FIG. 11 is a schematic representation of a chemical vapor depositionsystem including a liquid phase reagent dispensing apparatus shown inelevation view and partial cross-section.

DETAILED DESCRIPTION OF THE INVENTION

As indicated above, this invention relates in part to a vapor or liquidphase reagent dispensing apparatus. Referring to FIGS. 1, 2 and 3, anillustrative vapor or liquid phase reagent dispensing apparatuscomprises:

a vessel 40 which comprises a removable top wall member 20, a sidewallmember 22 and a bottom wall member 26 configured to form an internalvessel compartment to hold a source chemical 44 up to a fill level 42and to additionally define an inner gas volume 46 above the fill level42;

said sidewall member 22 having a protuberance 24 that extends into theinternal vessel compartment adjacent to the top wall member 20;

said top wall member 20 and said sidewall member 22 having opposing flatsurfaces, wherein the opposing flat surfaces are optionally in contactwith one another;

fastening means 28 for securing said top wall member 20 to said sidewallmember 22 through the opposing flat surfaces that are optionally incontact with one another;

said top wall member 20 and said protuberance 24 having opposing flatsurfaces, wherein the opposing flat surfaces are not in contact with oneanother and at least a portion of the opposing flat surfaces arehardened 30; and

a metal seal 10 aligned and in contact with the hardened opposing flatsurfaces 30 of said top wall member 20 and said protuberance 24;

wherein said hardened opposing flat surfaces 30 of said top wall member20 and said protuberance 24 have a hardness greater than the hardness ofsaid metal seal 10.

Referring to FIG. 1, the vapor phase reagent dispensing apparatusfurther comprises a portion of the top wall member 20 having a carriergas feed inlet opening 52 through which carrier gas can be fed into saidinner gas volume 46 above the fill level 42 to cause vapor of saidsource chemical 44 to become entrained in said carrier gas to producevapor phase reagent; and a portion of the top wall member 20 having avapor phase reagent outlet opening 54 through which said vapor phasereagent can be dispensed from said apparatus.

The vapor phase reagent dispensing apparatus, as depicted in FIG. 1,further comprises a carrier gas feed line 62 extending from the carriergas feed inlet opening 52 upwardly and exteriorly from the top wallmember 20 for delivery of carrier gas into said inner gas volume 46above the fill level 42, the carrier gas feed line 62 containing acarrier gas flow control valve 56 therein for control of flow of thecarrier gas therethrough; and a vapor phase reagent discharge line 64extending from the vapor phase reagent outlet opening 54 upwardly andexteriorly from the top wall member 20 for removal of vapor phasereagent from said inner gas volume 46 above the fill level 42, the vaporphase reagent discharge line 64 containing a vapor phase reagent flowcontrol valve 58 therein for control of flow of the vapor phase reagenttherethrough.

FIG. 1 is an embodiment of U.S. patent application Ser. No. 12/014,248,filed Jan. 15, 2008 and incorporated by reference herein.

Referring to FIG. 2, the vapor phase reagent dispensing apparatusfurther comprises a portion of the top wall member 20 having a carriergas feed inlet opening comprising a bubbler tube 72 that extends throughthe inner gas volume 46 into the source chemical 44 and through whichsaid carrier gas can be bubbled into the source chemical 44 to cause atleast a portion of source chemical vapor to become entrained in saidcarrier gas to produce a flow of vapor phase reagent to said inner gasvolume 46 above the fill level 42, said bubbler tube 72 having an inletend adjacent to the top wall member 20 and an outlet end adjacent to thebottom wall member 26; and a portion of the top wall member 20 having avapor phase reagent outlet opening 54 through which said vapor phasereagent can be dispensed from said apparatus.

The vapor phase reagent dispensing apparatus, as depicted in FIG. 2,further comprises a carrier gas feed line 62 extending from the carriergas feed inlet opening upwardly and exteriorly from the top wall member20 for delivery of carrier gas into said source chemical 44, the carriergas feed line containing a carrier gas flow control valve 56 therein forcontrol of flow of the carrier gas therethrough; and a vapor phasereagent discharge line 64 extending from the vapor phase reagent outletopening 54 upwardly and exteriorly from the top wall member 20 forremoval of vapor phase reagent from said inner gas volume 46 above thefill level 42, the vapor phase reagent discharge line 64 containing avapor phase reagent flow control valve 58 therein for control of flow ofthe vapor phase reagent therethrough.

Referring to FIG. 3, the liquid phase reagent dispensing apparatusfurther comprises a portion of the top wall member 20 having an inertgas feed inlet opening 52 through which said inert gas can be fed intothe inner gas volume 46 above the fill level 42 to pressurize the innergas volume above the fill level 42; and a portion of the top wall member20 having a liquid phase reagent outlet opening comprising a diptube 74that extends through the inner gas volume 46 into the source chemical 44and through which liquid phase reagent can be dispensed from saidapparatus, said diptube 74 having an outlet end adjacent to the top wallmember 20 and an inlet end adjacent to the bottom wall member 26.

The liquid phase reagent dispensing apparatus, as depicted in FIG. 3,further comprises an inert gas feed line 62 extending from the inert gasfeed inlet opening 52 upwardly and exteriorly from the top wall member20 for delivery of inert gas into said inner gas volume 46 above thefill level 42, the inert gas feed line 62 containing an inert gas flowcontrol valve 56 therein for control of flow of the inert gastherethrough; and a liquid phase reagent discharge line 63 extendingfrom the liquid phase reagent outlet opening upwardly and exteriorlyfrom the top wall member 20 for removal of liquid phase reagent fromsaid vessel 40, the liquid phase reagent discharge line 63 containing aliquid phase reagent flow control valve 57 therein for control of flowof the liquid phase reagent therethrough.

FIG. 3 is an embodiment of U.S. patent application Ser. No. 12/014,282,filed Jan. 15, 2008 and issued Jun. 14, 2011 as U.S. Pat. No. 7,959,994,and incorporated by reference herein.

The vessel or ampoule is typically machined from stainless steel, e.g.,316L, and electropolished to prevent contamination of the precursorliquid or solid source chemical. The cover or top wall member isremovable to facilitate cleaning and reuse. The vessel can comprise acylindrically shaped side wall member or side wall members defining anon-cylindrical shape. The metal seal is aligned and is in contact withthe hardened opposing flat surfaces of the top wall member and theprotuberance to provide a leak tight seal for the vessel or ampoule. Themetal material used in the metal seal, e.g., outer metal jacket, ispreferably 316L stainless steel like the vessel or ampoule.

The metal seal or gasket preferably comprises an annular shaped sealhaving a cross section provided with an outer circumferential openingand formed in a laterally C-shape or U-shape. Referring to FIGS. 4 and6, the metal seal 10 preferably comprises an outer metal jacket 16, aninner elastomeric material or spring 12, and a liner 14 positionedbetween said outer metal jacket 16 and said inner elastomeric materialor spring 12. The metal seal is capable of sealing even with a lowclamping pressure. The metal seal is typically a single-use seal but maybe reusable. The metal seal or gasket can reduce the tightening forcenecessary for sealing of the container.

Referring to FIGS. 4, 5 and 6, the outer metal jacket 16 preferablyincludes a projection 18 which is annularly formed at a top exteriorsurface and which abuts against the hardened flat surface 30 of the topwall member 20, and a projection 18 which is annularly formed at abottom exterior surface and which abuts against the hardened flatsurface 30 of the protuberance 24. The hardened opposing faces on theflat surfaces 30 of the top wall member 20 and the protuberance 24 bothextend the useful life of the container and allow for a tighter seal.

A metal material such as stainless steel, inconel, and the like andmaterials obtained by plating or vapor depositing soft metal such asnickel and the like on the surfaces of metal materials can be generallyused as a metal material used in the metal jacket. However, when themetal seal is used in a semiconductor application, it is preferable touse a single material of corrosion resistant austenite stainless steelsuch as 316L stainless steel and a twice or thrice vacuum meltedmaterial made of stainless steel, e.g., material that is melted andrefined in vacuum twice or thrice to remove chemical components by whichpollution is caused.

The outer metal jacket 16 is preferably made of stainless steel, i.e.,the same material used in construction of the vessel. Other illustrativeseals include, for example, elastomeric single use or reusable sealsmade from Viton®, or hard single use or reusable seals made fromTeflon®. While some materials will form a leak tight seal, as measuredby a helium leak test, the seals useful in this invention areimpermeable to moisture and thereby do not cause degradation of moisturesensitive materials.

Illustrative elastomeric materials useful in the metal seals include,for example, (i) rubber such as natural rubber, ethylene propylenerubber, ethylene propylene diene rubber, acrylonitrile-butadiene rubber,hydrogenated acrylonitrile-butadiene rubber, styrene-butadiene rubber,silicone rubber, chloroprene rubber, chlorosulfonated polyethylenerubber, fluorine rubber, fluoridated silicone rubber, acrylic rubber,and ethylene acrylic rubber or its crosslinked rubber, and (ii)thermoplastic elastomers such as thermoplastic elastomers of thepolystyrene system, thermoplastic elastomers of the polyolefin system,thermoplastic elastomers of the polyvinyl chloride system, andthermoplastic elastomers of the polyester system. See, for example, U.S.Pat. No. 6,357,759 B1.

The metal seals of this invention can be constructed of either an outerstainless steel, e.g., 316 stainless steel, or nickel jacket wrappedaround an inner elastomeric material or spring. As shown in FIGS. 4 and6, in cross section, a typical seal has a “C” shape with the opening ofthe C facing out. Compression of non-delta seals (i.e., those having asmooth round metal jacket with no projections) can result intelegraphing of the spring shape to both the opposing flat surfaces ofthe top wall member and the protuberance. Compression of the delta seal(i.e., those having projections on the top and bottom portions of themetal jacket) from a stainless steel jacket can impart a sharp line toan unhardened opposing flat surfaces of the top wall member and theprotuberance from the delta or projection. See FIGS. 7 and 8 which showdamage inflicted by a stainless steel delta C-ring when used in anampoule without any treatment to harden the opposing flat surfaces ofthe top wall member and the protuberance.

In accordance with this invention, the size of the metal seal can belarge enough so that a liner can be added to prevent telegraphing of thespring to the metal surfaces. Illustrative liners that can be used inthe metal seals include, for example, those made of inconel, stainlesssteel alloy and the like. The liners provide stiffness to the metalseal. To further reduce the damage to the opposing flat surfaces of thetop wall member and the protuberance, diamond burnishing can be appliedto the surfaces to smooth the surfaces and work harden them.

The dimensions of the metal seal useful in this invention can varywidely. These dimensions allow the top wall member of the ampoule to sitsquarely and completely butted on the sidewall member at the optimalseal compression while, at the same time, a leak tight seal can beformed between the hardened surfaces of the top wall member and theprotuberance.

The preferred seals useful in this invention are made of metal and aregenerally not reusable. Garlock Industries produces a C-ring seal usefulin this invention. See FIGS. 4 and 6. Preferred seals useful in thisinvention are constructed of an outer 316 stainless steel jacket wrappedaround an inner spring. In cross section, the seal has a “C” shape withthe opening of the C facing out. Since the ampoule or container is madeof stainless steel, e.g., 316 stainless steel, this is the preferredmaterial of construction to minimize any potential trace metalcontamination produced by interaction of the high purity chemical with anon-316 stainless steel seal. Another concern could be galvaniccorrosion between a non-stainless steel seal and the ampoule orcontainer.

As shown in FIGS. 4 and 6, for ultra-high vacuum applications, the metalseal 10 can incorporate a projection 18, e.g., delta, into the top andbottom surfaces of the seal. This will focus the seal along the narrowridge of the protuberance 24 and concentrate the seal force in thehardened areas 30 of the top wall member 20 and protuberance 24.

Compression of a 316 stainless steel delta seal can generate a tightseal on unhardened surfaces. Unfortunately, it can also impart a sharpgroove to the unhardened top wall member and protuberance member fromthe delta cutting into the unhardened surfaces thereby shortening theuseful life of the vessel or ampoule.

The two-part containers (ampoules) of this invention have hardenedopposing flat surfaces of the top wall member and the protuberanceextending into the internal vessel compartment adjacent to the top wallmember. One illustrative hardening method involves burnishing theopposing faces of the top wall member and the protuberance. Anotherillustrative hardening method involves welding stellite into theopposing flat surfaces of the top wall member and the protuberance.Damage from the metal seal to the opposing flat surfaces of the top wallmember and the protuberance can be prevented by these hardening methods.The hardened opposing faces facilitate extension of the useful life ofthe container and allow for a tighter seal.

The hardened opposing flat surfaces of the top wall member and theprotuberance can be formed by burnishing said opposing flat sealingsurfaces. The hardened opposing flat surfaces of the top wall member andthe protuberance can also be formed by incorporating a hardeningmaterial into the opposing flat surfaces. An illustrative hardeningmaterial comprises Stellite.

In accordance with this invention, the sealing surfaces of both the topwall member and the protuberance are hardened. Hardening can be achievedin several ways. As an illustration, the sealing surfaces can beburnished or polished with a diamond tipped tool. This can increase thehardness between 1 and 200% of the initial value, preferably between30-70%.

Another illustrative hardening technique involves the introduction ofStellite 4®, a weldable, hard tool grade metal into the opposingsurfaces of the top wall member and the protuberance as shown in FIG. 5.A bead of Stellite® (Rockwell Hardness C=48 in which higher numbersindicate a harder surface) can be welded into both opposing surfaces ofthe top wall member and the protuberance and then ground down to producea desired smooth surface. Use of either method along with a delta sealcan result in a leak-tight, reusable container with no damage to thesealing surfaces.

Fastening means are used to secure the top wall member to the sidewallmember through the opposing flat surfaces that are in contact with oneanother. Suitable fastening means include, for example, bolts. Thenumber of bolts needed to secure the top wall member to the sidewallmember is not narrowly critical and can range from about 2 to about 20bolts, preferably from about 4 to about 16 bolts, and more preferablyfrom about 8 to about 12 bolts. The bolts are tightened sufficient togive a helium leak rate of less than 9×10⁻⁹ standard cubic centimetersper second, typically a tightening torque of about 0.1 Nm/piece. Themetal seals used in this invention are constructed such that asatisfactory sealing property is obtained, even if it is used with a lowclamping pressure.

A measure of a container's ability to seal (and reseal) is determined bya helium leak rate. A container which has a helium leak rate of lessthan 9×10⁻⁹ atm-cc/sec (standard cubic centimeters per second) is highlydesirable, less than 6×10⁻⁹ atm-cc/sec (standard cubic centimeters persecond) is preferred, and less than 3×10⁻⁹ atm-cc/sec (standard cubiccentimeters per second) is more preferred. While this value is easy toachieve for a one-part container, it has proven to be difficult toachieve for two-part containers where the cover can be removed from thebase. Two-part containers are easier to clean, which is critical fordelivering consistently high purity chemicals. As set forth herein, thedesign and construction of both the metal seal and the hardened opposingflat surfaces of the top wall member and the protuberance are importantto a successful container.

The ampoule can include inlet and outlet valves to allow the chemicalsto be delivered to the end use equipment. Optional ampoule equipmentinclude a fill port and a source chemical level sensor to determine whenthe ampoule is nearly empty. The material in the container is deliveredeither under vacuum, for low vapor pressure chemicals, or using an inertgas to sweep the vapors out. The material may alternatively be deliveredas a liquid through a dip tube to the end use equipment where it can bevaporized or dispensed as needed.

A temperature sensor is preferably included in the ampoule to ensureuniform heat conduction. A source chemical level sensor is preferablyincluded in the ampoule to ensure efficient use of the source chemical.The valves and source chemical level sensor are attached via face sealconnections to ensure a clean, leak proof seal. Once assembled in aclean room, the ampoule is conditioned to remove adsorbed water and leakchecked with a helium leak detector. The ampoule is designed to be usedat pressures from a few torr to slightly above ambient.

In an embodiment of this invention, the temperature sensor extends froman upper end exterior of the vessel through a portion of the top wallmember and generally vertically downwardly into the interior volume ofthe vessel, with the lower end of the temperature sensor being locatedin non-interfering proximity to the surface of the bottom wall. Thesource chemical level sensor extends from an upper end exterior of thevessel through a portion of the top wall member and generally verticallydownwardly into the interior volume of the vessel, with the lower end ofthe source chemical level sensor being located in non-interferingproximity to the surface of the bottom wall. The temperature sensor isoperatively arranged in the vessel to determine the temperature ofsource chemical in the vessel, the source chemical level sensor isoperatively arranged in the vessel to determine the level of sourcechemical in the vessel, the temperature sensor and source chemical levelsensor are located in non-interfering proximity to each other in thevessel, with the lower end of the temperature sensor being located atthe same or closer proximity to the surface of the vessel in relation tothe lower end of the source chemical level sensor, and the temperaturesensor and source chemical level sensor are in source chemical flowcommunication in the vessel. The source chemical level sensor isselected from ultrasonic sensors, optical sensors, capacitive sensorsand float-type sensors, and said temperature sensor comprises athermowell and thermocouple.

In an embodiment of this invention, the bottom wall member provides asump cavity in which the lower end of a temperature sensor, sourcechemical level sensor, dip tube and/or bubbler tube may be disposed.Such a configuration can permit a high percentage, e.g., 95% or greater,preferably 98% or greater, of the volume of the originally furnishedliquid or solid source chemical to be utilized in the application forwhich the source chemical is selectively dispensed. This configurationcan also improve the economics of the source chemical supply anddispensing system and processes in which the dispensed source chemicalis employed.

This invention allows for a minimal amount of semiconductor precursorchemical to remain in the ampoule or bubbler when the source chemicallevel sensor has signaled the end of the contents. This is veryimportant as the complexity and cost of semiconductor precursors rises.In order to minimize costs, semiconductor manufacturers will want towaste as little precursor as possible. In addition, this inventionplaces the temperature sensor in the same recessed sump cavity as thesource chemical level sensor. This ensures that the true temperature ofthe source chemical semiconductor precursor will be read as long as thesource chemical level sensor indicates there is precursor present. Thisis important from a safety standpoint. If the temperature sensor was tobe outside of the semiconductor precursor it would send a false lowtemperature signal to the heating apparatus. This could lead to theapplication of excessive heat to the ampoule which can cause an unsafesituation and decomposition of the semiconductor precursor.

Referring again to the vessel or ampoule, the vessel can be equippedwith a source chemical level sensor which extends from an upper portionexterior of the vessel, downwardly through a non-centrally locatedportion of the top wall member of the vessel, to a lower end,non-centrally located on the bottom floor member, in close proximity tothe surface of the sump cavity of the vessel to permit utilization of atleast 95% of source chemical reagent when source chemical reagent iscontained in the vessel. The upper portion of the source chemical levelsensor may be connected by a source chemical level sensing signaltransmission line to a central processing unit, for transmission ofsensed source chemical level signals from the source chemical levelsensor to the central processing unit during operation of the system.

In a like manner, the vessel can be equipped with a temperature sensor,i.e., a thermowell and thermocouple, which extends from an upper portionexterior of the vessel, downwardly through a centrally located portionof the top wall member of the vessel, to a lower end, centrally locatedon the bottom wall member, in close proximity to the surface of the sumpcavity of the vessel. The upper portion of the temperature sensor may beconnected by a temperature sensing signal transmission line to a centralprocessing unit, for transmission of sensed temperature signals from thetemperature sensor to the central processing unit during operation ofthe system.

The central processing unit, which may comprise a suitablemicroprocessor, computer, or other appropriate control means, may alsobe joined by a control signal transmission line to a flow control valve(e.g., via a suitable valve actuator element) to selectively adjust flowcontrol valve and control the flow of carrier gas to the vessel. Thecentral processing unit may also be joined by a control signaltransmission line to a second flow control valve (e.g., via a suitablevalve actuator element) to selectively adjust the flow control valve andcontrol the discharge of vapor or liquid phase reagent from the vessel.For purposes of this invention, flow control valves shall includeisolation valves, metering valves and the like.

In addition to easier cleaning afforded by the two-part ampoules, thisinvention allows the semiconductor manufacturer to use the maximumamount of precursor while wasting very little before change-out of theampoule. This minimizes waste and maximizes the return on the investmentin the semiconductor precursor and specific application.

As depicted in FIGS. 1, 2 and 3, a typical two-part ampoule consists ofa vessel or cylinder of about five to six inches in diameter and five toseven inches in height and is constructed of 316 stainless steel(316SS). The top wall member is about a half of an inch thick and isattached by eight to twelve bolts to the sidewall member. The metal sealarea is expanded in FIG. 5. The ampoule may or may not have an eductor(or dip) tube installed. A fill port may also be included. One valve maybe used as an inlet for an inert gas to sweep the product out of theoutlet valve. The ampoule may also have a bubbler tube. The bubbler tubecan be used to bubble an inert gas through the product to assist indelivering the material as a vapor.

In an embodiment of this invention, all of the top wall member force canbe directed to the metal seal. That is, the top wall member and thesidewall member may not touch. However, in such a configuration, it ispossible that the top wall member could be bumped and dislodged enoughto break the delicate seal between the C-ring and ampoule. Preferably,the top wall member and sidewall member are mated by tightening thebolts such that the seal only acts as a seal and is not involved inpreventing movement between the top wall member and the sidewall member.

Illustrative source chemicals useful in this invention can vary over awide range and include, for example, liquid or solid precursors formetals selected from ruthenium, hafnium, tantalum, molybdenum, platinum,gold, titanium, lead, palladium, zirconium, bismuth, strontium, barium,calcium, antimony and thallium, or precursors for metalloids selectedfrom silicon and germanium. Preferred organometallic precursor compoundsinclude ruthenium-containing, hafnium-containing, tantalum-containingand/or molybdenum-containing organometallic precursor compounds.

Solid source chemicals that sublime and solid source chemicals that meltupon heating can be used in this invention. For example, solid sourcechemicals that sublime can be used in the vapor phase reagent dispensingapparatus shown in FIGS. 1 and 2. Solid source chemicals that melt uponheating can be used in the vapor phase reagent dispensing apparatusshown in FIGS. 1 and 2 and the liquid phase reagent dispensing apparatusshown in FIG. 3. Likewise, liquid source chemicals can be used in thevapor phase reagent dispensing apparatus shown in FIGS. 1 and 2 and theliquid phase reagent dispensing apparatus shown in FIG. 3. When usingsolid source chemicals that sublime, it may be necessary to employ dustentrapment equipment.

Illustrative vapor or liquid phase reagents useful in this invention canvary over a wide range and include, for example, precursors for metalsselected from ruthenium, hafnium, tantalum, molybdenum, platinum, gold,titanium, lead, palladium, zirconium, bismuth, strontium, barium,calcium, antimony and thallium, or precursors for a metalloids selectedfrom silicon and germanium. Preferred organometallic precursor compoundsinclude ruthenium-containing, hafnium-containing, tantalum-containingand/or molybdenum-containing organometallic precursor compounds.

Referring to FIG. 9, which is a schematic representation of a chemicalvapor deposition system including a vapor phase reagent dispensingapparatus shown in elevation view and partial cross-section, the vaporphase reagent dispensing apparatus comprises a vessel 40 that includes atop wall member 20, a sidewall member 22 which may comprise acylindrical wall or wall segments defining an enclosing sidewallstructure, e.g., of square or other non-circular cross-section, and abottom wall member 26. The top wall member 20, sidewall member 22 andbottom wall member 26 define an enclosed internal vessel compartment,which in operation may contain an inner gas volume 46 overlying a sourcechemical 44 defining a fill level 42 at a gas-liquid or gas-solidinterface. The top wall member 20 and the sidewall member 22 haveopposing flat surfaces that may or may not be in contact with oneanother.

The sidewall member 22 has a protuberance 24 that extends into the innervessel compartment. The protuberance 24 is located adjacent to the topwall member 20. The top wall member 20 and the protuberance 24 haveopposing flat surfaces that are not in contact with one another. Atleast a portion of the opposing flat surfaces of the top wall member 20and the protuberance 24 are hardened. A metal seal 10 is aligned and incontact with the hardened opposing flat surfaces 30 of the top wallmember 20 and the protuberance 24.

The vapor phase reagent dispensing apparatus is equipped with a carriergas feed line 62 and 72 extending from the carrier gas feed inletopening 52 upwardly and exteriorly from the top wall member 20 fordelivery of carrier gas into said inner gas volume 46 above the filllevel 42 to cause vapor of said source chemical 44 to become entrainedin said carrier gas to produce vapor phase reagent. The carrier gas feedline 62 and 72 includes a carrier gas flow control valve 56 therein forcontrol of flow of the carrier gas therethrough. The carrier gas feedline 62 and 72 is coupled to a carrier gas source 74. The carrier gassource 74 can be of any suitable type, for example, a high pressure gascylinder, a cryogenic air separation plant, or a pressure swing airseparation unit, furnishing a carrier gas, e.g., nitrogen, argon,helium, etc., to the carrier gas feed line 62 and 72.

The vapor phase reagent dispensing apparatus is also equipped with avapor phase reagent discharge line 64 and 82 extending from the vaporphase reagent outlet opening 54 upwardly and exteriorly from the topwall member 20 for removal of vapor phase reagent from said inner gasvolume 46 above the fill level 42. The vapor phase reagent dischargeline 64 and 82 includes a vapor phase reagent flow control valve 58therein for control of flow of the vapor phase reagent therethrough.

Referring to FIG. 9, the deposition chamber 88 can be a chemical vapordeposition chamber or an atomic layer deposition chamber. The vaporphase reagent discharge line 64 and 82 connects the vapor phase reagentdispensing apparatus to the deposition chamber 88. A heatable susceptor92 is contained within the deposition chamber 88 and is located in areceiving relationship to the vapor phase reagent discharge line 64 and82. An effluent discharge line 96 is connected to the deposition chamber88. The vapor phase reagent passes through the vapor phase reagentdischarge line 64 and 82 and into the deposition chamber 88, for contactwith a substrate 94 on the heatable susceptor 92 and any remainingeffluent is discharged through the effluent discharge line 96. Theeffluent may be passed to recycle, recovery, waste treatment, disposal,or other disposition means.

Referring to FIG. 9, this invention relates in part to a method fordelivery of a vapor phase reagent to a deposition chamber comprising:

(a) providing a vapor phase reagent dispensing apparatus comprising:

a vessel 40 which comprises a removable top wall member 20, a sidewallmember 22 and a bottom wall member 26 configured to form an internalvessel compartment to hold a source chemical 44 up to a fill level 42and to additionally define an inner gas volume 46 above the fill level42;

said sidewall member 22 having a protuberance 24 that extends into theinternal vessel compartment adjacent to the top wall member 20;

said top wall member 20 and said sidewall member 22 having opposing flatsurfaces, wherein the opposing flat surfaces are optionally in contactwith one another;

fastening means 28 for securing said top wall member 20 to said sidewallmember 22 through the opposing flat surfaces that are optionally incontact with one another;

said top wall member 20 and said protuberance 24 having opposing flatsurfaces, wherein the opposing flat surfaces are not in contact with oneanother and at least a portion of the opposing flat surfaces arehardened 30; and

a metal seal 10 aligned and in contact with the hardened opposing flatsurfaces 30 of said top wall member 20 and said protuberance 24;

wherein said hardened opposing flat surfaces 30 of said top wall member20 and said protuberance 24 have a hardness greater than the hardness ofsaid metal seal 10;

a portion of the top wall member 20 having a carrier gas feed inletopening 52 through which carrier gas can be fed into said inner gasvolume 46 above the fill level 42 to cause vapor of said source chemical44 to become entrained in said carrier gas to produce vapor phasereagent;

a carrier gas feed line 62 and 72 extending from the carrier gas feedinlet opening 52 upwardly and exteriorly from the top wall member 20 fordelivery of carrier gas into said inner gas volume 46 above the filllevel 42, the carrier gas feed line 62 and 72 containing a carrier gasflow control valve 56 therein for control of flow of the carrier gastherethrough;

a portion of the top wall member 20 having a vapor phase reagent outletopening 54 through which said vapor phase reagent can be dispensed fromsaid apparatus; and

a vapor phase reagent discharge line 64 and 82 extending from the vaporphase reagent outlet opening 54 upwardly and exteriorly from the topwall member 20 for removal of vapor phase reagent from said inner gasvolume 46 above the fill level 42, the vapor phase reagent dischargeline 64 and 82 containing a vapor phase reagent flow control valve 58therein for control of flow of the vapor phase reagent therethrough;

adding source chemical 44 at ambient temperature to said vapor phasereagent dispensing apparatus;

heating the source chemical 44 in said vapor phase reagent dispensingapparatus to a temperature sufficient to vaporize the source chemical toprovide vapor phase reagent;

feeding a carrier gas into said vapor phase reagent dispensing apparatusthrough said carrier gas feed line 62 and 72;

withdrawing the vapor phase reagent and carrier gas from said vaporphase reagent dispensing apparatus through said vapor phase reagentdischarge line 64 and 82; and

feeding the vapor phase reagent and carrier gas into said depositionchamber 88.

The method can further comprise:

contacting the vapor phase reagent with a substrate 94 on a heatablesusceptor 92 within the deposition chamber 88; and

discharging any remaining effluent through an effluent discharge line 96connected to the deposition chamber 88.

In operation of the system depicted in FIG. 9, source chemical 44 isplaced in the vessel 40 and heated to a temperature sufficient tovaporize the source chemical 44. Carrier gas is allowed to flow throughthe carrier gas feed line 62 and 72 to the carrier gas feed inletopening 52 from which it is discharged into the inner gas volume 46above the fill level 42. A carrier gas flow control valve 56 controlsthe flow of the carrier gas that is discharged into the inner gas volume46. Vapor from the source chemical 44 becomes entrained in the carriergas to produce vapor phase reagent.

The vapor phase reagent is discharged from the inner gas volume 46through the vapor phase reagent outlet opening 54 and the vapor phasereagent discharge line 64 and 82. The vapor phase reagent is flowed inthe vapor phase reagent discharge line 64 and 82 to the depositionchamber 88. A vapor phase reagent flow control valve 58 controls theflow of the vapor phase reagent that is flowed to the deposition chamber88. In the deposition chamber 88, the vapor phase reagent is depositedonto the wafer or other substrate element 94 that is mounted on aheatable substrate 92 or other mount structure. Effluent vapor from thedeposition chamber 88 is discharged in effluent discharge line 96. Theeffluent may be passed to recycle, recovery, waste treatment, disposal,or other disposition means.

During this operation, the source chemical fill level in the vessel isdetected by a source chemical level sensor (not shown in FIG. 9). It isimportant to know when the liquid precursor chemical inside of thevessel is close to running out so that it can be changed at the end of achemical vapor deposition or atomic layer deposition cycle. The sourcechemical level progressively declines and eventually lowers into thesump cavity to a minimum liquid head (height of liquid in the sumpcavity), at which point the central processing unit receives acorresponding sensed source chemical level signal by a source chemicallevel sensing signal transmission line. The central processing unitresponsively transmits a control signal in a control signal transmissionline to the carrier gas flow control valve to close the valve and shutoff the flow of carrier gas to the vessel, and also concurrentlytransmits a control signal in a control signal transmission line toclose the vapor phase reagent flow control valve, to shut off the flowof vapor phase reagent from the vessel.

Also, during this operation, the temperature of the source chemical invessel is detected by a temperature sensor (not shown in FIG. 9). It isimportant to monitor the temperature of the liquid precursor chemicalinside of the vessel to control the vapor pressure. If the temperatureof the source chemical in the vessel becomes too high, the centralprocessing unit receives a corresponding sensed temperature signal by atemperature sensing signal transmission line. The central processingunit responsively transmits a control signal in a control signaltransmission line to a heating means to decrease the temperature.

The vapor phase reagent dispensing apparatus of this invention may beuseful for vaporization of liquids and solid materials, e.g., liquid andsolid source reagents used in chemical vapor deposition, atomic layerdeposition and ion implantation processes. See, for example, U.S. Pat.No. 6,921,062 B2.

The vapor phase reagent dispensing apparatus and method for delivery ofa vapor phase reagent to a deposition chamber, both described above, areembodiments of U.S. patent application Ser. No. 12/014,248 filed Jan.15, 2008, and incorporated by reference herein.

In an embodiment depicted in FIG. 10, which is a schematicrepresentation of a chemical vapor deposition system including a vaporphase reagent dispensing apparatus shown in elevation view and partialcross-section, the vapor phase reagent dispensing apparatus furthercomprises a portion of the top wall member 20 having a carrier gas feedinlet opening comprising a bubbler tube 72 that extends through theinner gas volume 46 into the source chemical 44 and through which saidcarrier gas can be bubbled into the source chemical 44 to cause at leasta portion of source chemical vapor to become entrained in said carriergas to produce a flow of vapor phase reagent to said inner gas volume 46above the fill level 42, said bubbler tube 72 having an inlet endadjacent to the top wall member 20 and an outlet end adjacent to thebottom wall member 26; and a portion of the top wall member 20 having avapor phase reagent outlet opening 54 through which said vapor phasereagent can be dispensed from said apparatus.

Referring to FIG. 10, the vapor phase reagent dispensing apparatuscomprises a vessel 40 that includes a top wall member 20, a sidewallmember 22 which may comprise a cylindrical wall or wall segmentsdefining an enclosing sidewall structure, e.g., of square or othernon-circular cross-section, and a bottom wall member 26. The top wallmember 20, sidewall member 22 and bottom wall member 26 define anenclosed internal vessel compartment, which in operation may contain aninner gas volume 46 overlying a source chemical 44 defining a fill level42 at a gas-liquid or gas-solid interface. The top wall member 20 andthe sidewall member 22 have opposing flat surfaces that may or may notbe in contact with one another.

The sidewall member 22 has a protuberance 24 that extends into the innervessel compartment. The protuberance 24 is located adjacent to the topwall member 20. The top wall member 20 and the protuberance 24 haveopposing flat surfaces that are not in contact with one another. Atleast a portion of the opposing flat surfaces of the top wall member 20and the protuberance 24 are hardened. A metal seal 10 is aligned and incontact with the hardened opposing flat surfaces 30 of the top wallmember 20 and the protuberance 24.

The vapor phase reagent dispensing apparatus is equipped with a carriergas feed line 62 and 72 extending from the carrier gas feed inletopening upwardly and exteriorly from the top wall member 20 and with abubbler tube 72 that extends through the inner gas volume 46 into thesource chemical 44 for delivery of carrier gas into said source chemical44 to cause vapor of said source chemical 44 to become entrained in saidcarrier gas to produce vapor phase reagent. The bubbler tube 72 has aninlet end adjacent to the top wall member 20 and an outlet end adjacentto the bottom wall member 26. The carrier gas feed line 62 and 72includes a carrier gas flow control valve 56 therein for control of flowof the carrier gas therethrough. The carrier gas feed line 62 and 72 iscoupled to a carrier gas source 74. The carrier gas source 74 can be ofany suitable type, for example, a high pressure gas cylinder, acryogenic air separation plant, or a pressure swing air separation unit,furnishing a carrier gas, e.g., nitrogen, argon, helium, etc., to thecarrier gas feed line 62 and 72.

The vapor phase reagent dispensing apparatus is also equipped with avapor phase reagent discharge line 64 and 82 extending from the vaporphase reagent outlet opening 54 upwardly and exteriorly from the topwall member 20 for removal of vapor phase reagent from said inner gasvolume 46 above the fill level 42. The vapor phase reagent dischargeline 64 and 82 includes a vapor phase reagent flow control valve 58therein for control of flow of the vapor phase reagent therethrough.

Referring to FIG. 10, the deposition chamber 88 can be a chemical vapordeposition chamber or an atomic layer deposition chamber. The vaporphase reagent discharge line 64 and 82 connects the vapor phase reagentdispensing apparatus to the deposition chamber 88. A heatable susceptor92 is contained within the deposition chamber 88 and is located in areceiving relationship to the vapor phase reagent discharge line 64 and82. An effluent discharge line 96 is connected to the deposition chamber88. The vapor phase reagent passes through the vapor phase reagentdischarge line 64 and 82 and into the deposition chamber 88, for contactwith a substrate 94 on the heatable susceptor 92 and any remainingeffluent is discharged through the effluent discharge line 96. Theeffluent may be passed to recycle, recovery, waste treatment, disposal,or other disposition means.

Referring to FIG. 10, this invention relates in part to a method fordelivery of a vapor phase reagent to a deposition chamber comprising:

(b) providing a vapor phase reagent dispensing apparatus comprising:

a vessel 40 which comprises a removable top wall member 20, a sidewallmember 22 and a bottom wall member 26 configured to form an internalvessel compartment to hold a source chemical 44 up to a fill level 42and to additionally define an inner gas volume 46 above the fill level42;

said sidewall member 22 having a protuberance 24 that extends into theinternal vessel compartment adjacent to the top wall member 20;

said top wall member 20 and said sidewall member 22 having opposing flatsurfaces, wherein the opposing flat surfaces are optionally in contactwith one another;

fastening means 28 for securing said top wall member 20 to said sidewallmember 22 through the opposing flat surfaces that are optionally incontact with one another;

said top wall member 20 and said protuberance 24 having opposing flatsurfaces, wherein the opposing flat surfaces are not in contact with oneanother and at least a portion of the opposing flat surfaces arehardened; and

a metal seal 10 aligned and in contact with the hardened opposing flatsurfaces 30 of said top wall member 20 and said protuberance 24;

wherein said hardened opposing flat surfaces 30 of said top wall member20 and said protuberance 24 have a hardness greater than the hardness ofsaid metal seal 10;

a portion of the top wall member 20 having a carrier gas feed inletopening comprising a bubbler tube 72 that extends through the inner gasvolume 46 into the source chemical 44 and through which said carrier gascan be bubbled into the source chemical 44 to cause at least a portionof source chemical vapor to become entrained in said carrier gas toproduce a flow of vapor phase reagent to said inner gas volume 46 abovethe fill level 42, said bubbler tube 72 having an inlet end adjacent tothe top wall member 20 and an outlet end adjacent to the bottom wallmember 26;

a carrier gas feed line 62 and 72 extending from the carrier gas feedinlet opening upwardly and exteriorly from the top wall member 20 fordelivery of carrier gas into said source chemical 44, the carrier gasfeed line 62 and 72 containing a carrier gas flow control valve 56therein for control of flow of the carrier gas therethrough;

a portion of the top wall member 20 having a vapor phase reagent outletopening 54 through which said vapor phase reagent can be dispensed fromsaid apparatus; and

a vapor phase reagent discharge line 64 and 82 extending from the vaporphase reagent outlet opening 54 upwardly and exteriorly from the topwall member 20 for removal of vapor phase reagent from said inner gasvolume 46 above the fill level 42, the vapor phase reagent dischargeline 64 and 82 containing a vapor phase reagent flow control valve 58therein for control of flow of the vapor phase reagent therethrough;

adding source chemical 44 at ambient temperature to said vapor phasereagent dispensing apparatus;

heating the source chemical 44 in said vapor phase reagent dispensingapparatus to a temperature sufficient to vaporize the source chemical 44to provide vapor phase reagent;

feeding a carrier gas into said vapor phase reagent dispensing apparatusthrough said carrier gas feed line 62 and 72;

withdrawing the vapor phase reagent and carrier gas from said vaporphase reagent dispensing apparatus through said vapor phase reagentdischarge line 64 and 82; and

feeding the vapor phase reagent and carrier gas into said depositionchamber 88.

The method can further comprise:

contacting the vapor phase reagent with a substrate 94 on a heatablesusceptor 92 within the deposition chamber 88; and

discharging any remaining effluent through an effluent discharge line 96connected to the deposition chamber 88.

In operation of the system depicted in FIG. 10, source chemical 44 isplaced in the vessel 40 and heated to a temperature sufficient tovaporize the source chemical 44. Carrier gas is allowed to flow throughthe carrier gas feed line 62 and 72 to the carrier gas feed inletopening and through bubbler tube 72 from which it is bubbled into thesource chemical 44. A carrier gas flow control valve 56 controls theflow of the carrier gas that is discharged into the source chemical 44.Vapor from the source chemical 44 becomes entrained in the carrier gasto produce vapor phase reagent.

The vapor phase reagent is discharged from the inner gas volume 46through the vapor phase reagent outlet opening 54 and the vapor phasereagent discharge line 64 and 82. The vapor phase reagent is flowed inthe vapor phase reagent discharge line 64 and 82 to the depositionchamber 88. A vapor phase reagent flow control valve 58 controls theflow of the vapor phase reagent that is flowed to the deposition chamber88. In the deposition chamber 88, the vapor phase reagent is depositedonto the wafer or other substrate element 94 that is mounted on aheatable substrate 92 or other mount structure. Effluent vapor from thedeposition chamber 88 is discharged in effluent discharge line 96. Theeffluent may be passed to recycle, recovery, waste treatment, disposal,or other disposition means.

During this operation, the source chemical fill level in the vessel isdetected by a source chemical level sensor (not shown in FIG. 10). It isimportant to know when the liquid precursor chemical inside of thevessel is close to running out so that it can be changed at the end of achemical vapor deposition or atomic layer deposition cycle. The sourcechemical level progressively declines and eventually lowers into thesump cavity to a minimum liquid head (height of liquid in the sumpcavity), at which point the central processing unit receives acorresponding sensed source chemical level signal by a source chemicallevel sensing signal transmission line. The central processing unitresponsively transmits a control signal in a control signal transmissionline to the carrier gas flow control valve to close the valve and shutoff the flow of carrier gas to the vessel, and also concurrentlytransmits a control signal in a control signal transmission line toclose the vapor phase reagent flow control valve, to shut off the flowof vapor phase reagent from the vessel.

Also, during this operation, the temperature of the source chemical invessel is detected by a temperature sensor (not shown in FIG. 10). It isimportant to monitor the temperature of the liquid precursor chemicalinside of the vessel to control the vapor pressure. If the temperatureof the source chemical in the vessel becomes too high, the centralprocessing unit receives a corresponding sensed temperature signal by atemperature sensing signal transmission line. The central processingunit responsively transmits a control signal in a control signaltransmission line to a heating means to decrease the temperature.

The vapor phase reagent dispensing apparatus, i.e., bubbler, of thisinvention may be useful for vaporization of liquids and solid materials,e.g., liquid and solid source reagents used in chemical vapordeposition, atomic layer deposition and ion implantation processes. See,for example, U.S. Pat. No. 7,077,388 B2.

In an embodiment depicted in FIG. 11, which is a schematicrepresentation of a chemical vapor deposition system including a liquidphase reagent dispensing apparatus shown in elevation view and partialcross-section, the liquid phase reagent dispensing apparatus furthercomprises a portion of the top wall member 20 having an inert gas feedinlet opening 52 through which said inert gas can be fed into the innergas volume 46 above the fill level 42 to pressurize the inner gas volumeabove the fill level 42; and a portion of the top wall member 20 havinga liquid phase reagent outlet opening comprising a diptube 74 thatextends through the inner gas volume 46 into the source chemical 44 andthrough which liquid phase reagent can be dispensed from said apparatus,said diptube 74 having an outlet end adjacent to the top wall member 20and an inlet end adjacent to the bottom wall member 26.

Referring to FIG. 11, the liquid phase reagent dispensing apparatuscomprises a vessel 40 that includes a top wall member 20, a sidewallmember 22 which may comprise a cylindrical wall or wall segmentsdefining an enclosing sidewall structure, e.g., of square or othernon-circular cross-section, and a bottom wall member 26. The top wallmember 20, sidewall member 22 and bottom wall member 26 define anenclosed internal vessel compartment, which in operation may contain aninner gas volume 46 overlying a source chemical 44 defining a fill level42 at a gas-liquid or gas-solid interface. The top wall member 20 andthe sidewall member 22 have opposing flat surfaces that may or may notbe in contact with one another.

The sidewall member 22 has a protuberance 24 that extends into the innervessel compartment. The protuberance 24 is located adjacent to the topwall member 20. The top wall member 20 and the protuberance 24 haveopposing flat surfaces that are not in contact with one another. Atleast a portion of the opposing flat surfaces of the top wall member 20and the protuberance 24 are hardened. A metal seal 10 is aligned and incontact with the hardened opposing flat surfaces 30 of the top wallmember 20 and the protuberance 24.

The liquid phase reagent dispensing apparatus is equipped with an inertgas feed line 62 and 72 extending from the inert gas feed inlet opening52 upwardly and exteriorly from the top wall member 20 for delivery ofinert gas into said inner gas volume 46 above the fill level 42 topressurize the inner gas volume 46 above the fill level 42. The inertgas feed line 62 and 72 includes an inert gas flow control valve 56therein for control of flow of the inert gas therethrough. The inert gasfeed line 62 and 82 is coupled to an inert gas source 74. The inert gassource 74 can be of any suitable type, for example, a high pressure gascylinder, a cryogenic air separation plant, or a pressure swing airseparation unit, furnishing an inert gas, e.g., nitrogen, argon, helium,etc., to the inert gas feed line 62 and 72.

The liquid phase reagent dispensing apparatus is also equipped with adiptube 74 that extends through the inner gas volume 46 into the sourcechemical 44 and through which liquid phase reagent can be dispensed fromsaid apparatus. The diptube 74 has an outlet end adjacent to the topwall member 20 and an inlet end adjacent to the bottom wall member 26.

The liquid phase reagent dispensing apparatus is also equipped with aliquid phase reagent discharge line 63 and 81 extending from the liquidphase reagent outlet opening (e.g., diptube 74) upwardly and exteriorlyfrom the top wall member 20 for removal of liquid phase reagent fromsaid vessel 40. The liquid phase reagent discharge line 63 and 81includes a liquid phase reagent flow control valve 57 therein forcontrol of flow of the liquid phase reagent therethrough.

Referring to FIG. 11, the deposition chamber 88 can be a chemical vapordeposition chamber or an atomic layer deposition chamber. The liquidphase reagent discharge line 63 and 81 connects the liquid phase reagentdispensing apparatus to a vaporization apparatus 84. The vaporizationapparatus 84 has a carrier gas feed line (not shown in FIG. 11)extending from the carrier gas feed inlet opening (not shown in FIG. 11)upwardly and exteriorly from the vaporization apparatus 84 through whichcarrier gas can be fed into the vaporization apparatus 84 to cause vaporof said liquid phase reagent to become entrained in the carrier gas toproduce vapor phase reagent. The carrier gas feed line contains acarrier gas flow control valve (not shown in FIG. 11) for control offlow of the carrier gas therethrough. The carrier gas feed line iscoupled to a carrier gas source (not shown in FIG. 11). The carrier gassource can be of any suitable type, for example, a high pressure gascylinder, a cryogenic air separation plant, or a pressure swing airseparation unit, furnishing a carrier gas, e.g., nitrogen, argon,helium, etc., to the carrier gas feed line.

The vaporization apparatus 84 has a vapor phase reagent discharge line86 extending from the vapor phase reagent outlet opening upwardly andexteriorly from the vaporization apparatus 84 through which the vaporphase reagent can be dispensed from the vaporization apparatus 84 to thedeposition chamber 88. The vapor phase reagent discharge line 86contains a vapor phase reagent flow control valve (not shown in FIG. 11)therein for control of flow of the vapor phase reagent therethrough.

A heatable susceptor 92 is contained within the deposition chamber 88and is located in a receiving relationship to the vapor phase reagentdischarge line 86. An effluent discharge line 96 is connected to thedeposition chamber 88. The vapor phase reagent passes through the vaporphase reagent discharge line 86 and into the deposition chamber 88, forcontact with a substrate 94 on the heatable susceptor 92 and anyremaining effluent is discharged through the effluent discharge line 96.The effluent may be passed to recycle, recovery, waste treatment,disposal, or other disposition means.

Referring to FIG. 11, this invention relates in part to a method fordelivery of a vapor phase reagent to a deposition chamber comprising:

(c) providing a liquid phase reagent dispensing apparatus comprising:

a vessel 40 which comprises a removable top wall member 20, a sidewallmember 22 and a bottom wall member 26 configured to form an internalvessel compartment to hold a source chemical 44 up to a fill level 42and to additionally define an inner gas volume 46 above the fill level42;

said sidewall member 22 having a protuberance 24 that extends into theinternal vessel compartment adjacent to the top wall member 20;

said top wall member 20 and said sidewall member 22 having opposing flatsurfaces, wherein the opposing flat surfaces are optionally in contactwith one another;

fastening means 28 for securing said top wall member 20 to said sidewallmember 22 through the opposing flat surfaces that are optionally incontact with one another;

said top wall member 20 and said protuberance 24 having opposing flatsurfaces, wherein the opposing flat surfaces are not in contact with oneanother and at least a portion of the opposing flat surfaces arehardened; and

a metal seal 10 aligned and in contact with the hardened opposing flatsurfaces 30 of said top wall member 20 and said protuberance 24;

wherein said hardened opposing flat surfaces 30 of said top wall member20 and said protuberance 24 have a hardness greater than the hardness ofsaid metal seal 10;

a portion of the top wall member 20 having an inert gas feed inletopening 52 through which said inert gas can be fed into the inner gasvolume 46 above the fill level 42 to pressurize the inner gas volume 46above the fill level 42;

an inert gas feed line 62 and 72 extending from the inert gas feed inletopening 52 upwardly and exteriorly from the top wall member 20 fordelivery of inert gas into said inner gas volume 46 above the fill level42, the carrier gas feed line 62 and 72 containing an inert gas flowcontrol valve 56 therein for control of flow of the inert gastherethrough;

a portion of the top wall member 20 having a liquid phase reagent outletopening comprising a diptube 74 that extends through the inner gasvolume 46 into the source chemical 44 and through which liquid phasereagent can be dispensed from said apparatus, said diptube 74 having anoutlet end adjacent to the top wall member 20 and an inlet end adjacentto the bottom wall member 26; and

a liquid phase reagent discharge line 63 and 81 extending from theliquid phase reagent outlet opening upwardly and exteriorly from the topwall member 20 for removal of liquid phase reagent from said vessel 40,the liquid phase reagent discharge line 63 and 81 containing a liquidphase reagent flow control valve 57 therein for control of flow of theliquid phase reagent therethrough;

adding liquid phase reagent at ambient temperature to said liquid phasereagent dispensing apparatus;

optionally heating a solid source chemical in said liquid phase reagentdispensing apparatus to a temperature sufficient to melt the solidsource chemical to provide liquid phase reagent;

feeding an inert gas into said liquid phase reagent dispensing apparatusthrough said inert gas feed line 62 and 72;

withdrawing the liquid phase reagent from said liquid phase reagentdispensing apparatus through said diptube 74 and said liquid phasereagent discharge line 63 and 81;

providing a vaporization apparatus 84 comprising:

a vessel which comprises a top wall member, a sidewall member and abottom wall member configured to form an internal vessel compartment tovaporize the liquid phase reagent;

said liquid phase reagent discharge line 63 and 81 connecting the liquidphase reagent dispensing apparatus to said vaporization apparatus 84;

a portion of the vaporization apparatus 84 having a carrier gas feedinlet opening through which carrier gas can be fed into saidvaporization apparatus 84 to cause vapor of said liquid phase reagent tobecome entrained in said carrier gas to produce vapor phase reagent;

a portion of the vaporization apparatus 84 having a vapor phase reagentoutlet opening through which said vapor phase reagent can be dispensedfrom said vaporization apparatus 84;

a carrier gas feed line extending from the carrier gas feed inletopening upwardly and exteriorly from the vaporization apparatus fordelivery of carrier gas into said vaporization apparatus 84, the carriergas feed line containing a carrier gas flow control valve therein forcontrol of flow of the carrier gas therethrough;

a vapor phase reagent discharge line 86 extending from the vapor phasereagent outlet opening upwardly and exteriorly from the vaporizationapparatus 84 for removal of vapor phase reagent from said vaporizationapparatus 84 to said deposition chamber 88, the vapor phase reagentdischarge line 86 containing a vapor phase reagent flow control valvetherein for control of flow of the vapor phase reagent therethrough;

feeding the liquid phase reagent into said vaporization apparatus 84;

heating the liquid phase reagent in said vaporization apparatus 84 to atemperature sufficient to vaporize the liquid phase reagent to providesaid vapor phase reagent;

feeding a carrier gas into said vaporization apparatus 84 through saidcarrier gas feed line;

withdrawing the vapor phase reagent and carrier gas from saidvaporization apparatus through said vapor phase reagent discharge line86; and

feeding the vapor phase reagent and carrier gas into said depositionchamber 88.

The method can further comprise:

contacting the vapor phase reagent with a substrate 94 on a heatablesusceptor 92 within the deposition chamber 88; and

discharging any remaining effluent through an effluent discharge line 96connected to the deposition chamber 88.

In an illustrative operation of the system depicted in FIG. 11, sourcechemical 44 is placed in the vessel 40 and an inert gas is allowed toflow through the inert gas feed line 62 and 72 to the inert gas feedinlet opening 52 and into the inner gas volume 46 above the fill level42 to pressurize the inner gas volume 46 above the fill level 42. Aninert gas flow control valve 56 controls the flow of the inert gas thatis discharged into the inner gas volume 46 above the fill level 42.

The liquid phase reagent is discharged from the vessel 40 through liquidphase reagent outlet opening (e.g., diptube 74) and the liquid phasereagent discharge line 63 and 81. The liquid phase reagent is flowed inthe liquid phase reagent discharge line 63 and 81 to the depositionchamber 88. A liquid phase reagent flow control valve 57 controls theflow of the liquid phase reagent that is flowed to the vaporizationapparatus 84.

In vaporization apparatus 84, the liquid phase reagent is vaporized toform a source vapor for the subsequent vapor deposition operation. Thevaporization apparatus 84 may also receive a carrier gas for combiningwith or shrouding the source vapor produced by vaporization of theliquid phase reagent. Alternatively, the source vapor may be passed tothe downstream vapor deposition operation in neat form. In any event,the source vapor from vaporization apparatus 84 is flowed through vaporphase reagent discharge line 86 to deposition chamber 88. In thedeposition chamber 88, the vapor phase reagent is deposited onto thewafer or other substrate element 94 that is mounted on a heatablesubstrate 92 or other mount structure. Effluent vapor from thedeposition chamber 88 is discharged in effluent discharge line 96. Theeffluent may be passed to recycle, recovery, waste treatment, disposal,or other disposition means.

During this operation, the source chemical fill level in the vessel isdetected by a source chemical level sensor. It is important to know whenthe liquid precursor chemical inside of the vessel is close to runningout so that it can be changed at the end of a chemical vapor depositionor atomic layer deposition cycle. The source chemical levelprogressively declines and eventually lowers into the sump cavity to aminimum liquid head (height of liquid in the sump cavity), at whichpoint the central processing unit receives a corresponding sensed sourcechemical level signal by a source chemical level sensing signaltransmission line. The central processing unit responsively transmits acontrol signal in a control signal transmission line to the carrier gasflow control valve to close the valve and shut off the flow of carriergas to the vessel, and also concurrently transmits a control signal in acontrol signal transmission line to close the liquid phase reagent flowcontrol valve, to shut off the flow of liquid reagent from the vessel.

Also, during this operation, the temperature of the source chemical invessel is detected by a temperature sensor. It is important to monitorthe temperature of the liquid precursor chemical inside of the vessel tocontrol the vapor pressure. If the temperature of the source chemical inthe vessel becomes too high, the central processing unit receives acorresponding sensed temperature signal by a temperature sensing signaltransmission line. The central processing unit responsively transmits acontrol signal in a control signal transmission line to a heating meansto decrease the temperature.

The liquid phase reagent dispensing apparatus of this invention may beuseful for dispensing of reagents such as precursors used in chemicalvapor deposition, atomic layer deposition and ion implantationprocesses, and can achieve a high level of withdrawal of liquid reagentfrom the vessel. See, for example, U.S. Pat. No. 6,077,356.

The liquid phase reagent dispensing apparatus, i.e., diptube, and methodfor delivery of a vapor phase reagent to a deposition chamber, bothdescribed above, are embodiments of U.S. patent application Ser. No.12/014,282, filed Jan. 15, 2008 and issued Jun. 14, 2011 as U.S. Pat.No. 7,959,994, and incorporated by reference herein.

In an embodiment of this invention, an organometallic compound isemployed in vapor phase deposition techniques for forming powders, filmsor coatings. The compound can be employed as a single source precursoror can be used together with one or more other precursors, for instance,with vapor generated by heating at least one other organometalliccompound or metal complex.

Deposition can be conducted in the presence of other vapor phasecomponents. In an embodiment of the invention, film deposition isconducted in the presence of at least one non-reactive carrier gas.Examples of non-reactive gases include inert gases, e.g., nitrogen,argon, helium, as well as other gases that do not react with theorganometallic compound precursor under process conditions. In otherembodiments, film deposition is conducted in the presence of at leastone reactive gas. Some of the reactive gases that can be employedinclude but are not limited to hydrazine, oxygen, hydrogen, air,oxygen-enriched air, ozone (O₃), nitrous oxide (N₂O), water vapor,organic vapors, ammonia and others. As known in the art, the presence ofan oxidizing gas, such as, for example, air, oxygen, oxygen-enrichedair, O₃, N₂O or a vapor of an oxidizing organic compound, favors theformation of a metal oxide film.

Deposition methods described herein can be conducted to form a film,powder or coating that includes a single metal or a film, powder orcoating that includes a single metal oxide. Mixed films, powders orcoatings also can be deposited, for instance mixed metal oxide films. Amixed metal oxide film can be formed, for example, by employing severalorganometallic precursors, at least one of which being selected from theorganometallic compounds described above.

Vapor phase film deposition can be conducted to form film layers of adesired thickness, for example, in the range of from less than 1 nm toover 1 mm. The precursors described herein are particularly useful forproducing thin films, e.g., films having a thickness in the range offrom about 10 nm to about 100 nm. Films of this invention, for instance,can be considered for fabricating metal electrodes, in particular asn-channel metal electrodes in logic, as capacitor electrodes for DRAMapplications, and as dielectric materials.

The deposition method also is suited for preparing layered films,wherein at least two of the layers differ in phase or composition.Examples of layered film include metal-insulator-semiconductor, andmetal-insulator-metal.

The organometallic compound precursors can be employed in atomic layerdeposition, chemical vapor deposition or, more specifically, inmetalorganic chemical vapor deposition processes known in the art. Forinstance, the organometallic compound precursors described above can beused in atmospheric, as well as in low pressure, chemical vapordeposition processes. The compounds can be employed in hot wall chemicalvapor deposition, a method in which the entire reaction chamber isheated, as well as in cold or warm wall type chemical vapor deposition,a technique in which only the substrate is being heated.

The organometallic compound precursors described above also can be usedin plasma or photo-assisted chemical vapor deposition processes, inwhich the energy from a plasma or electromagnetic energy, respectively,is used to activate the chemical vapor deposition precursor. Thecompounds also can be employed in ion-beam, electron-beam assistedchemical vapor deposition processes in which, respectively, an ion beamor electron beam is directed to the substrate to supply energy fordecomposing a chemical vapor deposition precursor. Laser-assistedchemical vapor deposition processes, in which laser light is directed tothe substrate to affect photolytic reactions of the chemical vapordeposition precursor, also can be used.

The deposition method can be conducted in various chemical vapordeposition reactors, such as, for instance, hot or cold-wall reactors,plasma-assisted, beam-assisted or laser-assisted reactors, as known inthe art.

Illustrative substrates useful in the deposition chamber include, forexample, materials selected from a metal, a metal silicide, asemiconductor, an insulator and a barrier material. A preferredsubstrate is a patterned wafer. Examples of substrates that can becoated employing the deposition method include solid substrates such asmetal substrates, e.g., Al, Ni, Ti, Co, Pt, Ta; metal silicides, e.g.,TiSi₂, CoSi₂, NiSi₂; semiconductor materials, e.g., Si, SiGe, GaAs, InP,diamond, GaN, SiC; insulators, e.g., SiO₂, Si₃N₄, HfO₂, Ta₂O₅, Al₂O₃,barium strontium titanate (BST); barrier materials, e.g., TiN, TaN; oron substrates that include combinations of materials. In addition, filmsor coatings can be formed on glass, ceramics, plastics, thermosetpolymeric materials, and on other coatings or film layers. In apreferred embodiment, film deposition is on a substrate used in themanufacture or processing of electronic components. In otherembodiments, a substrate is employed to support a low resistivityconductor deposit that is stable in the presence of an oxidizer at hightemperature or an optically transmitting film.

The deposition method can be conducted to deposit a film on a substratethat has a smooth, flat surface. In an embodiment, the method isconducted to deposit a film on a substrate used in wafer manufacturingor processing. For instance, the method can be conducted to deposit afilm on patterned substrates that include features such as trenches,holes or vias. Furthermore, the deposition method also can be integratedwith other steps in wafer manufacturing or processing, e.g., masking,etching and others.

Chemical vapor deposition films can be deposited to a desired thickness.For example, films formed can be less than 1 micron thick, preferablyless than 500 nanometers and more preferably less than 200 nanometersthick. Films that are less than 50 nanometers thick, for instance, filmsthat have a thickness between about 0.1 and about 20 nanometers, alsocan be produced.

Organometallic compound precursors described above also can be employedin the method of the invention to form films by atomic layer depositionor atomic layer nucleation techniques, during which a substrate isexposed to alternate pulses of precursor, oxidizer and inert gasstreams. Sequential layer deposition techniques are described, forexample, in U.S. Pat. No. 6,287,965 and in U.S. Pat. No. 6,342,277. Thedisclosures of both patents are incorporated herein by reference intheir entirety.

For example, in one atomic layer deposition cycle, a substrate isexposed, in step-wise manner, to: a) an inert gas; b) inert gas carryingprecursor vapor; c) inert gas; and d) oxidizer, alone or together withinert gas. In general, each step can be as short as the equipment willpermit (e.g. milliseconds) and as long as the process requires (e.g.several seconds or minutes). The duration of one cycle can be as shortas milliseconds and as long as minutes. The cycle is repeated over aperiod that can range from a few minutes to hours. Film produced can bea few nanometers thin or thicker, e.g., 1 millimeter (mm).

The means and method of this invention thus achieves a substantialadvance in the art, in the provision of a system for supply anddispensing of a vapor or liquid phase reagent, which permits 95-98% ofthe volume of the originally furnished source chemical to be utilized inthe application for which the vapor or liquid phase reagent isselectively dispensed. The ease of cleaning of the two-part ampouleallows for re-use of these ampoules beyond what may be attained with theone-part ampoules.

Correspondingly, in operations such as the manufacture of semiconductorand superconductor products, it is possible with the means and method ofthis invention to reduce the waste of the source chemical to levels aslow as 2-5% of the volume originally loaded into the dispensing vessel,and to re-use the ampoules many times over.

Accordingly, the practice of this invention markedly improves theeconomics of the source chemical supply and vapor or liquid phasereagent dispensing system, and the process in which the dispensed vaporor liquid phase reagent is employed. The invention in some instances maypermit the cost-effective utilization of source chemicals which were asa practical matter precluded by the waste levels characteristic of priorart practice.

As a further benefit of this invention, the reduced source chemicalinventory in the vessel at the end of the vapor or liquid phase reagentdispensing operation permits the switch-over time, during which theexhausted supply vessel is changed out from the process system, andreplaced with another vessel for further processing, to be minimized asa result of the greater on-stream time for the supply vessel owing toincreased usage of the originally charged liquid therefrom, relative tosuch prior practice.

Various modifications and variations of this invention will be obviousto a worker skilled in the art and it is to be understood that suchmodifications and variations are to be included within the purview ofthis application and the spirit and scope of the claims.

EXAMPLE 1 Preparation of Top Wall Member and Protuberance Surfaces

As depicted in FIG. 5, the opposing sealing surfaces of the top wallmember and the protuberance incorporate Stellite and can cover the fullwidth of the top wall member and protuberance sealing areas. The sealingsurfaces are then polished to a finish of 10-100 RMS, preferable 15 RMS.

EXAMPLE 2 Preparation of Top Wall Member and Protuberance Surfaces

In this example, the opposing sealing surfaces of the top wall memberand the protuberance are polished using a diamond tip burnishing tool toboth work harden the stainless steel, i.e., 316 stainless steel, andproduce the desired surface roughness of 15 RMS.

EXAMPLE 3 Chemical Vapor Deposition Using Tetrakis(dimethylamino)hafnium(TDMAH)

An ampoule similar to that depicted in FIG. 1 is filled approximately ¾full with TDMAH. TDMAH is a solid at ambient temperature and melts atapproximately 29° C. A source chemical level sensor can be used that isa single point optical type that works by internal reflection of a lightsource when the sensor is in contact with a liquid. When no liquid ispresent, there is no internal reflection. The source chemical levelsensor sends a signal when the TDMAH precursor content of the ampoulepasses the end of the sensor.

The source chemical level sensor can be mounted thru a ¾ inch face sealconnection. The temperature sensor can be a K type thermocouple in anall welded thermowell located in the center of the ampoule cover. Thethermowell can be filled with a high temperature, heat conducting oil toensure contact between the temperature sensor and the thermowell. Theends of the thermowell and source chemical level sensor extend into theinternal vessel compartment near the bottom wall member of the ampoule.The seal between the opposing flat surfaces of the top wall member andthe protuberance is depicted in FIG. 5. The carrier gas is nitrogen. Thepressure of the gas is from 1 mTorr to 1000 Torr.

A suitable delivery temperature for TDMAH is between 40° C. and 100° C.Once the temperature sensor indicates that the ampoule has reacheddelivery temperature, the valves are opened allowing the carrier gas toenter the ampoule and a TDMAH precursor/carrier gas mixture to exit theampoule. The TDMAH precursor/carrier gas mixture travels through tubing,is heated to between 10 to 20 degrees hotter than the ampoule to preventcondensation of the TDMAH precursor within the connecting lines, to thechemical vapor deposition chamber. Inside the chemical vapor depositionchamber is a 300 mm silicon wafer that has been previously modified(e.g., patterned, etched, doped, etc.). The wafer is heated to between200° C. and 700° C. Inside the chemical vapor deposition chamber, theprecursor mixture comes into contact with oxygen at the surface of thewafer and hafnium oxide begins to grow. The wafer is exposed for a timebetween a few seconds and a few minutes to allow for growth of the oxidefilm to the desired thickness before gas flow is terminated.

EXAMPLE 4 Atomic Layer Deposition Using Tetrakis(diethylamino)hafnium(TDEAH)

An ampoule similar to that depicted in FIG. 1 is filled approximately ¾full with TDEAH. TDEAH is a liquid at ambient temperature. A sourcechemical level sensor can be used that is a four point ultrasonic typethat works by comparing the sonic conductance of a liquid to a gas. Thesource chemical level sensor sends a different signal when the TDEAHprecursor content of the ampoule reaches any of four preset points withthe last point being the end of the sensor. In this way the consumptionrate of TDEAH precursor within the ampoule is monitored during usethereof. This monitoring allows for better planning of ampoule changeout and gives the semiconductor manufacturer additional data about theprocess.

The source chemical level sensor can be mounted thru a ¾ inch face sealconnection. The temperature sensor can be a K type thermocouple in anall welded thermowell located in the center of the ampoule cover. Thethermowell can be filled with a high temperature, heat conducting oil toensure contact between the temperature sensor and the thermowell. Theends of the thermowell and source chemical level sensor extend into theinternal vessel compartment near the bottom wall of the ampoule. Theseal between the opposing flat surfaces of the top wall member and theprotuberance is depicted in FIG. 5. The carrier gas is nitrogen. Thepressure of the gas is from 1 mTorr to 1000 Torr.

A suitable delivery temperature for TDEAH is between 80° C. and 120° C.Once the temperature sensor indicates that the ampoule has reached theappropriate delivery temperature, the valves are opened allowing thecarrier gas to enter the ampoule and a TDEAH precursor/carrier gasmixture to exit the ampoule. At this point, another valve controls thedelivery of the TDEAH precursor/carrier gas mixture to an atomic layerdeposition chamber. The valve and the connecting tubing are heated tobetween 10 to 20 degrees hotter than the ampoule to prevent condensationof TDEAH precursor within the connecting lines, to the atomic layerdeposition chamber. Inside the atomic layer deposition chamber is a 300mm silicon wafer heated to between 200° C. and 700° C. that has beenpreviously modified (e.g. patterned, etched, doped, etc.). The precursordeposits on the surface of the wafer in the atomic layer depositionchamber. Once sufficient time has passed for a complete monolayer toform on the surface of the wafer, usually a few seconds, the flow ofTDEAH precursor/carrier gas mixture is interrupted and the chamber ispurged with nitrogen. Oxygen is then introduced to the atomic layerdeposition chamber and allowed to react with the TDEAH precursor on thesurface of the wafer forming an oxide. Once the reaction is complete,nitrogen is used to purge the chamber and the process is repeated with anew charge of TDEAH precursor/carrier gas. The process is repeateddepending on how many layers of oxide are needed. Typical repetitionsare from tens of cycles to hundreds of cycles.

EXAMPLE 5 Helium Leak Testing of Ampoules

A measure of a container's ability to seal (and reseal) is determined bya helium leak rate.

For an unfilled or empty container (e.g., ampoule) testing procedure, aclean, dry, empty container is attached to the helium leak detector,such as a Varian Model 979. Vacuum is applied to a value in the range of1×10⁻² torr to 1×10⁻⁴ torr, preferably 1×10⁻⁴ torr to 9×10⁻⁴ torr. Theunit is set to measure a leak rate under vacuum, which is sometimesreferred to as “outside-in” leak detection. A source of helium gas isthen applied around all the potential leak points, both welded jointsand mechanical seals (e.g., face seals) while the leak rate is observedon the read-out. An acceptable leak rate is in the range of 1×10⁻⁶atm-cc/sec to 1×10⁻¹¹ atm-cc/sec, preferably in the range of 1×10⁻⁹ to1×10⁻¹⁰ atm-cc/sec (standard cubic centimeters per second).

For a filled container (e.g., ampoule) testing procedure, the containeris filled with a precursor. Helium gas is added until the internalpressure is in the range of 1 psig to 30 psig, preferably about 5 psig,and all valves are closed tight. The ampoule is tested for leaks bysetting the Varian Model 979 to sniffer mode. This is sometimes referredto as “inside-out” leak detection. The Varian Model 979 is operated insniffer mode and all of the potential leak points, both welded jointsand mechanical seals (e.g., face seals), are tested, with specialattention for the fittings which are opened during filling of theampoule. The leak rate is observed on the read-out. An acceptable leakrate is in the range of 1×10⁻⁶ atm-cc/sec to 1×10⁻⁸ atm-cc/sec,preferably in the range of 1×10⁻⁸ to 9×10⁻⁸ atm-cc/sec (standard cubiccentimeters per second).

Ampoules similar to the one depicted in FIG. 1, with burnished opposingflat surfaces of the top wall member and the protuberance, were testedfor helium leak rates by both the unfilled ampoule and filled ampouletesting procedures above. The results are set forth below.

Helium Leak Rates

Unfilled Ampoule Filled Ampoule    6 × 10⁻⁹ atm-cc/sec 2.4 × 10⁻⁸atm-cc/sec  2.4 × 10⁻⁸ atm-cc/sec 2.3 × 10⁻⁸ atm-cc/sec  2.1 × 10⁻⁹atm-cc/sec 4.2 × 10⁻⁸ atm-cc/sec 4.9 × 10⁻¹⁰ atm-cc/sec 5.6 × 10⁻⁸atm-cc/sec   1 × 10⁻¹⁰ atm-cc/sec 3.8 × 10⁻⁸ atm-cc/sec 7.4 × 10⁻¹⁰atm-cc/sec 2.7 × 10⁻⁸ atm-cc/sec   1 × 10⁻¹⁰ atm-cc/sec 3.6 × 10⁻⁸atm-cc/sec   1 × 10⁻¹⁰ atm-cc/sec 2.6 × 10⁻⁸ atm-cc/sec 8.1 × 10⁻¹⁰atm-cc/sec   2 × 10⁻⁸ atm-cc/sec   1 × 10⁻¹⁰ atm-cc/sec 2.6 × 10⁻⁸atm-cc/sec  1.4 × 10⁻⁹ atm-cc/sec 2.8 × 10⁻⁸ atm-cc/sec 1.7 × 10⁻¹⁰atm-cc/sec 4.7 × 10⁻⁸ atm-cc/sec

Ampoules similar to the one depicted in FIG. 1, with Stelliteincorporated into the opposing flat surfaces of the top wall member andthe protuberance, were tested for helium leak rates by both the unfilledampoule and filled ampoule testing procedures above. The results are setforth below.

Helium Leak Rates

Unfilled Ampoule Filled Ampoule   1 × 10⁻¹⁰ atm-cc/sec   8 × 10⁻⁹atm-cc/sec  6.5 × 10⁻⁹ atm-cc/sec 1.7 × 10⁻⁸ atm-cc/sec

While it has been shown and described what is considered to be certainembodiments of the invention, it will, of course, be understood thatvarious modifications and changes in form or detail can readily be madewithout departing from the spirit and scope of the invention. It is,therefore, intended that this invention not be limited to the exact formand detail herein shown and described, nor to anything less than thewhole of the invention herein disclosed and hereinafter claimed.

The invention claimed is:
 1. A vapor phase reagent dispensing apparatus comprising: a vessel which comprises a removable top wall member, a sidewall member and a bottom wall member configured to form an internal vessel compartment to hold a source chemical up to a fill level and to additionally define an inner gas volume above the fill level; said sidewall member having a protuberance that extends into the internal vessel compartment adjacent to the top wall member; said top wall member and said sidewall member having opposing flat surfaces, wherein the opposing flat surfaces are optionally in contact with one another; fastening means for securing said top wall member to said sidewall member through the opposing flat surfaces that are optionally in contact with one another; said top wall member and said protuberance having opposing flat surfaces, wherein the opposing flat surfaces are not in contact with one another and at least a portion of the opposing flat surfaces are hardened; a metal seal aligned and in contact with the hardened opposing flat surfaces of said top wall member and said protuberance; a portion of the top wall member having a carrier gas feed inlet opening comprising a bubbler tube that extends through the inner gas volume into the source chemical and through which said carrier gas can be bubbled into the source chemical to cause at least a portion of source chemical vapor to become entrained in said carrier gas to produce a flow of vapor phase reagent to said inner gas volume above the fill level, said bubbler tube having an inlet end adjacent to the top wall member and an outlet end adjacent to the bottom wall member; and a portion of the top wall member having a vapor phase reagent outlet opening through which said vapor phase reagent can be dispensed from said apparatus; wherein said hardened opposing flat surfaces of said top wall member and said protuberance have a hardness greater than the hardness of said metal seal.
 2. The vapor phase reagent dispensing apparatus of claim 1 wherein the metal seal comprises an outer metal jacket, an inner elastomeric material or spring, and optionally a liner positioned between said outer metal jacket and said inner elastomeric material or spring.
 3. The vapor phase reagent dispensing apparatus of claim 2 wherein the outer metal jacket includes a projection which is annularly formed at a top exterior surface and which abuts against the hardened flat surface of the top wall member, and a projection which is annularly formed at a bottom exterior surface and which abuts against the hardened flat surface of the protuberance.
 4. The vapor phase reagent dispensing apparatus of claim 1 wherein the metal seal comprises an annular shaped seal having a cross section provided with an outer circumferential opening and formed in a laterally C-shape or U-shape.
 5. The vapor phase reagent dispensing apparatus of claim 1 wherein the hardened opposing flat surfaces of the top wall member and the protuberance are formed by burnishing said opposing flat surfaces.
 6. The vapor phase reagent dispensing apparatus of claim 1 wherein the hardened opposing flat surfaces of the top wall member and the protuberance are formed by incorporating a hardening material into the opposing flat surfaces.
 7. The vapor phase reagent dispensing apparatus of claim 6 wherein the hardening material comprises Stellite.
 8. The vapor phase reagent dispensing apparatus of claim 1 wherein the vessel is made of stainless steel and the outer metal jacket is made of stainless steel.
 9. The vapor phase reagent dispensing apparatus of claim 1 having a helium leak rate (unfilled container testing procedure) of less than 9×10⁻⁹ standard cubic centimeters per second.
 10. The vapor phase reagent dispensing apparatus of claim 1 further comprising: a carrier gas feed line extending from the carrier gas feed inlet opening upwardly and exteriorly from the top wall member for delivery of carrier gas into said source chemical, the carrier gas feed line containing a carrier gas flow control valve therein for control of flow of the carrier gas therethrough; and a vapor phase reagent discharge line extending from the vapor phase reagent outlet opening upwardly and exteriorly from the top wall member for removal of vapor phase reagent from said inner gas volume above the fill level, the vapor phase reagent discharge line containing a vapor phase reagent flow control valve therein for control of flow of the vapor phase reagent therethrough.
 11. The vapor phase reagent dispensing apparatus of claim 10 further comprising the vapor phase reagent discharge line in vapor phase reagent flow communication with a vapor phase delivery deposition system, said deposition system selected from a chemical vapor deposition system and an atomic layer deposition system.
 12. The vapor phase reagent dispensing apparatus of claim 10 further comprising: a deposition chamber selected from a chemical vapor deposition chamber and an atomic layer deposition chamber; the vapor phase reagent discharge line connecting the vapor phase reagent dispensing apparatus to the deposition chamber; a heatable susceptor contained within the deposition chamber and located in a receiving relationship to the vapor phase reagent discharge line; and an effluent discharge line connected to the deposition chamber; such that vapor phase reagent passes through the vapor phase reagent discharge line and into the deposition chamber, for contact with a substrate on the heatable susceptor and any remaining effluent is discharged through the effluent discharge line.
 13. The vapor phase reagent dispensing apparatus of claim 12 wherein said substrate is comprised of a material selected from a metal, a metal silicide, a semiconductor, an insulator and a barrier material.
 14. The vapor phase reagent dispensing apparatus of claim 12 wherein said substrate is a patterned wafer.
 15. The vapor phase reagent dispensing apparatus of claim 1 in which said bottom wall member has a sump cavity therein extending downwardly from the surface of said bottom wall member.
 16. The vapor phase reagent dispensing apparatus of claim 15 further comprising: a temperature sensor extending from an upper end exterior of the vessel through a portion of the top wall member and generally vertically downwardly through the inner gas volume into the source chemical, with the lower end of the temperature sensor being located in non-interfering proximity to the surface of the sump cavity; a source chemical level sensor extending from an upper end exterior of the vessel through a portion of the top wall member and generally vertically downwardly through the inner gas volume into the source chemical, with the lower end of the source chemical level sensor being located in non-interfering proximity to the surface of the sump cavity; and the temperature sensor being operatively arranged in the vessel to determine the temperature of source chemical in the vessel, the source chemical level sensor being operatively arranged in the vessel to determine the level of source chemical in the vessel, the temperature sensor and source chemical level sensor being located in non-interfering proximity to each other in the vessel, with the lower end of the temperature sensor being located at the same or closer proximity to the surface of the sump cavity in relation to the lower end of the source chemical level sensor, and the temperature sensor and source chemical level sensor being in source chemical flow communication in the vessel.
 17. The vapor phase reagent dispensing apparatus of claim 1 wherein the vessel comprises a cylindrically shaped side wall member or side wall members defining a non-cylindrical shape.
 18. The vapor phase reagent dispensing apparatus of claim 1 wherein the source chemical comprises a liquid or solid material.
 19. The vapor phase reagent dispensing apparatus of claim 1 wherein the source chemical comprises a precursor for a metal selected from ruthenium, hafnium, tantalum, molybdenum, platinum, gold, titanium, lead, palladium, zirconium, bismuth, strontium, barium, calcium, antimony and thallium, or a precursor for a metalloid selected from silicon and germanium.
 20. The vapor phase reagent dispensing apparatus of claim 1 wherein the vapor or liquid phase reagent comprises a precursor for a metal selected from ruthenium, hafnium, tantalum, molybdenum, platinum, gold, titanium, lead, palladium, zirconium, bismuth, strontium, barium, calcium, antimony and thallium, or a precursor for a metalloid selected from silicon and germanium.
 21. A method for delivery of a vapor phase reagent to a deposition chamber comprising: (a) providing a vapor phase reagent dispensing apparatus comprising: a vessel which comprises a removable top wall member, a sidewall member and a bottom wall member configured to form an internal vessel compartment to hold a source chemical up to a fill level and to additionally define an inner gas volume above the fill level; said sidewall member having a protuberance that extends into the internal vessel compartment adjacent to the top wall member; said top wall member and said sidewall member having opposing flat surfaces, wherein the opposing flat surfaces are optionally in contact with one another; fastening means for securing said top wall member to said sidewall member through the opposing flat surfaces that are optionally in contact with one another; said top wall member and said protuberance having opposing flat surfaces, wherein the opposing flat surfaces are not in contact with one another and at least a portion of the opposing flat surfaces are hardened; a metal seal aligned and in contact with the hardened opposing flat surfaces of said top wall member and said protuberance; a portion of the top wall member having a carrier gas feed inlet opening comprising a bubbler tube that extends through the inner gas volume into the source chemical and through which said carrier gas can be bubbled into the source chemical to cause at least a portion of source chemical vapor to become entrained in said carrier gas to produce a flow of vapor phase reagent to said inner gas volume above the fill level, said bubbler tube having an inlet end adjacent to the top wall member and an outlet end adjacent to the bottom wall member; a carrier gas feed line extending from the carrier gas feed inlet opening upwardly and exteriorly from the top wall member for delivery of carrier gas into said source chemical, the carrier gas feed line containing a carrier gas flow control valve therein for control of flow of the carrier gas therethrough; a portion of the top wall member having a vapor phase reagent outlet opening through which said vapor phase reagent can be dispensed from said apparatus; and a vapor phase reagent discharge line extending from the vapor phase reagent outlet opening upwardly and exteriorly from the top wall member for removal of vapor phase reagent from said inner gas volume above the fill level, the vapor phase reagent discharge line containing a vapor phase reagent flow control valve therein for control of flow of the vapor phase reagent therethrough; wherein said hardened opposing flat surfaces of said top wall member and said protuberance have a hardness greater than the hardness of said metal seal; (b) adding source chemical at ambient temperature to said vapor phase reagent dispensing apparatus; (c) heating the source chemical in said vapor phase reagent dispensing apparatus to a temperature sufficient to vaporize the source chemical to provide vapor phase reagent; (d) feeding a carrier gas into said vapor phase reagent dispensing apparatus through said carrier gas feed line and said bubbler tube; (e) withdrawing the vapor phase reagent and carrier gas from said vapor phase reagent dispensing apparatus through said vapor phase reagent discharge line; and (f) feeding the vapor phase reagent and carrier gas into said deposition chamber.
 22. The method of claim 21 further comprising: (g) contacting the vapor phase reagent with a substrate on a heatable susceptor within the deposition chamber; and (h) discharging any remaining effluent through an effluent discharge line connected to the deposition chamber.
 23. The method of claim 22 wherein said substrate is comprised of a material selected from a metal, a metal silicide, a semiconductor, an insulator and a barrier material.
 24. The method of claim 22 wherein said substrate is a patterned wafer.
 25. The method of claim 21 in which the deposition chamber is selected from a chemical vapor deposition chamber and an atomic layer deposition chamber. 